A 7.8Gb/s/pin 1.96pJ/b Compact Single-Ended TRX and CDR with Phase-Difference Modulation for Highly-Reflective Memory Interfaces
- Year
- 2018
- Author
- Sooeun Lee
- Co-author
- Jaeyoung Seo, Kyunghyun Lim, Jaehyun Ko, Jae-Yoon Sim, Hong-June Park and Byungsub Kim
- Conference
- 2018 IEEE International Solid - State Circuits Conference - (ISSCC)
- File
- A_7.8Gb_s_pin_1.96pJ_b_compact_single-ended_TRX_and_CDR_with_phase-difference_modulation_for_highly_reflective_memory_interfaces.pdf (871.4K) 34회 다운로드 DATE : 2022-05-01 17:39:05
- Link
- https://ieeexplore.ieee.org/document/8310289 762회 연결
National Research Foundation (NRF) of the MSIP, Korea, under Grant 2015R1A2A2A09001553,
Samsung POSTECH Research Center (SPRC) funded by Samsung Electronics,
IDEC for tool support.